摘要
This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas(DRAs)based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent modes with similar radiation patterns.The impedance bandwidth of 18.6%with the peak gain of 6 dBi is achieved for the proposed on-chip dual-mode DRA.In addition,the impedance bandwidth of 20.1%with the peak gain of 6.9 dBi is achieved for the proposed three-mode DRA.To the best of authors’knowledge,the on-chip multi-mode DRAs are first proposed.The impedance bandwidth of the proposed three-mode on-chip DRA is wider than the other on-chip DRAs using planar feeding with on-chip ground.The proposed antennas are promising for terahertz applications due to the merits of wide band,high gain and high radiation efficiency.
作者
TENG Yun-long
腾云龙(School of Microelectronics,Tianjin University,Tianjin 300072,China)
基金
the National Natural Science Foundation of China(No.61701339).