摘要
We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching,it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation,including increase of dark current near breakdown voltage,premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.
作者
苏琳琳
周东
刘清
任芳芳
陈敦军
张荣
郑有炓
陆海
Lin-Lin Su;Dong Zhou;Qing Liu;Fang-Fang Ren;Dun-Jun Chen;Rong Zhang;You-Dou Zheng;Hai Lu(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China)
基金
Supported by the National Key R&D Program of China under Grant No.2016YFB0400902
the National Natural Science Foundation of China under Grant No.61921005
the Natural Science Foundation of Jiangsu Province under Grant No.BK20190302。
