低温下GaSb基量子阱激光器的光电特性研究

Photoelectric Characteristics of GaSb-based Quantum Well Lasers at Low Temperature

研究了GaSb基量子阱激光器在低温下的光电特性和功耗。实验结果表明8μm条宽激光器阈值电流Ith=12 mA,此时电压为3.46 V,功耗为41.52 mW;10μm条宽激光器阈值电流Ith=6 mA,此时电压为2.60 V,功耗为15.60 mW。在15 K下的光谱随着注入电流的增加发生红移,在8~10 mA内的光谱漂移为0.39 nm/mA,在10~20 mA内为0.02 nm/mA。在15~65 K范围内光谱随着注入温度的增加发生红移,光谱红移速度为0.316 nm/K。研究结果对GaSb基量子阱激光器的进一步应用具有重要意义。

The photoelectric characteristics and power consumption of GaSb-based quantum well lasers at low temperature are explored.The experimental results indicate that the threshold current of the 8μm strip laser is Ith=12 mA,the voltage is 3.46 V,and the power consumption is 41.52 mW;the threshold current of the 10μm strip laser is Ith=6 mA,the voltage is 2.60 V,and the power consumption is 15.60 mW.The spectrum at 15 K is red-shifted as the injection current increases.The spectral drift in 8~10 mA is 0.39 nm/mA,and in 10~20 mA is 0.02 nm/mA.In the range of 15~65 K,the spectrum redshifts with increasing injection temperature,and the spectral redshift speed is 0.316 nm/K.The research results are of great significance for the further application of GaSb-based quantum well lasers.