填隙法在抛光铜衬底上制备高质量石墨烯薄膜

Graphene Films with High Quality Grown on Polished Copper Substrates by Gap-filling Method

本文对在抛光铜衬底上通过填隙法制备的高质量石墨烯薄膜进行了详细研究。在电化学机械抛光后的铜衬底上制备石墨烯晶畴,降低了晶畴的成核密度。利用光学显微镜和扫描电子显微镜对抛光铜衬底和未抛光铜衬底上制备的石墨烯晶畴进行测试,测试结果表明,铜衬底的表面形态对于降低石墨烯的成核密度,增大石墨烯晶畴的尺寸起到了至关重要的作用。利用拉曼面扫描证明了所制备的石墨烯晶畴为单层、均匀的石墨烯晶畴。然后,通过填隙法在抛光铜衬底上制备出由大尺寸单层的六边形石墨烯晶畴组成的石墨烯连续薄膜,并且通过流程示意图解释了填隙法制备高质量石墨烯薄膜的过程。本文所提出的在抛光铜衬底上通过填隙法制备石墨烯薄膜的技术,能够有效提高石墨烯薄膜的质量,进而有效改善石墨烯基电子器件的性能。

This paper presents a detailed study of gap-filling method to fabricate graphene films with high quality on polished Cu substrate.The nucleation density of graphene domains(GDs)reduces on the electrochemically and mechanically polished(ECMP)Cu substrate.Through the optical microscope and scanning electron microscope(SEM)testing of the graphene domains grown on the unpolished and polished Cu substrate,it demonstrated that the surface morphology of the Cu substrate was crucial in reducing the nucleation density and increasing the size of GDs.The Raman maps demonstrate that the GDs were homogeneous and monolayer graphene domains.Then large-area homogeneous monolayer graphene films with large-scale hexagonal domains were synthesized on the polishing Cu substrate by the gap-filling method.The process of preparing high quality graphene film by gap-filling method is explained through flow chart.Consequently,the technique of fabricate graphene films with high quality on polished Cu substrate by gap-filling method proposed in this paper can conveniently improve the properties of graphene films and graphene-based photoelectronic devices.