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银复合激光刻蚀FTO薄膜的光电性能 被引量:1

Photoelectric property of Ag-composited laser-etched FTO films
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摘要 在掺氟二氧化锡(FTO)薄膜基底表面用激光刻蚀凹槽后以磁控溅射法复合金属Ag层,然后进行炉内退火处理,制得Ag复合激光刻蚀FTO薄膜。研究了Ag层厚度对样品表面形貌、晶体结构及光电性能的影响。结果表明,当Ag层厚度为5 nm时,大部分银纳米颗粒均匀密集地分布在凹槽内表面而不是凹槽外表面。复合银纳米颗粒及炉内退火有效地提升了FTO薄膜的光电性能。Ag层厚度为5 nm的薄膜在400~800 nm波段的透光率为78.40%,方块电阻为8.21Ω,品质因子达到1.069×10^−2Ω^−1。 Ag-composited laser-etched FTO(fluorine-doped tin dioxide)films were prepared by magnetron sputtering of Ag layer on laser etched FTO film substrates followed by annealing in the furnace.The effect of Ag layer thickness on morphology,crystal structure,and photoelectric properties of the films was studied.The results showed that when the thickness of Ag layer was 5 nm,most of the silver nanoparticles were distributed uniformly and densely inside the grooves instead of outside the grooves.The deposition of silver nanoparticles and furnace annealing effectively improved the photoelectric properties of FTO film.The laser-etched FTO film incorporated with a 5-nm-thick Ag layer had an average transmittance of 78.40%with the wavelength range from 400 nm to 800 nm and a sheet resistance of 8.21Ω,thereby yielding the figure of merit of 1.069×10^−2Ω^−1.
作者 张耀 任乃飞 李保家 赵磊 季慧 ZHANG Yao;REN Naifei;LI Baojia;ZHAO Lei;JI Hui(School of Mechanical Engineering,Jiangsu University,Zhenjiang 212013,China;不详)
出处 《电镀与涂饰》 CAS CSCD 北大核心 2020年第12期755-759,共5页 Electroplating & Finishing
关键词 掺氟二氧化锡 激光刻蚀 银纳米颗粒 磁控溅射 光电性能 fluorine-doped tin dioxide laser etching silver nanoparticle magnetron sputtering photoelectric property
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  • 1姜辛,孙超,洪瑞红.透明导电氧化物薄膜.北京:高等教育出版社,2008.
  • 2王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2014 物理学报 63 028801.
  • 3Lü M S, Pang Z Y, Xiu X W, Dai Y, Han S H 2007 Chin. Phys. 16 0548.
  • 4Daniel P P, Michael G H, Paul G O, Wang Z B, Navid S, Nazir K, Lu Z H 2011 Nano Lett. 11 1457.
  • 5Xie J S, Chen Q 2014 Chin. Phys. B 23 097703.
  • 6Miyata T, Hikosaka T, Minami T 2000 Sens. Actuators B 69 16.
  • 7Berne‘de J C, Cattin L, Morsli M, Berredjem Y 2008 Sol. Energy Mater. Sol. Cells 92 1508.
  • 8Sutthana S, Hongsith N, Choopun S 2010 Curr. Appl. Phys. 10 813.
  • 9Li Z P, Men C L, Wang W, Cao J 2014 Chin. Phys. B 23 057205.
  • 10Park H K, Kang J W, Na S I, Kim D Y, Kim H K 2009 Sol. Energy Mater. Sol. Cells. 93 1994.

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