Ge50Te50/Zn15Sb85纳米复合多层薄膜在高热稳定性和低功耗相变存储器中的应用

Application of Ge50Te50/Zn15Sb85 nanocomposite multilayer films in high thermal stability and low power phase change memory

采用磁控溅射方法制备了Ge50Te50/Zn15Sb85纳米复合多层薄膜.研究了薄膜的电阻随温度的变化以及薄膜的晶化激活能.通过透射电子显微镜比较了晶化前后Ge50Te50/Zn15Sb85纳米复合多层薄膜的截面多层结构.制备了基于[GT(7nm)/ZS(3nm)]5多层复合薄膜的相变存储器件,并测试了其电性能.研究表明,Ge50Te50/Zn15Sb85纳米复合多层薄膜具有较好的非晶态热稳定性和数据保持力,其器件具有较快的转变速度、较低的操作功耗和较好的循环性能.Ge50Te50/Zn15Sb85纳米复合多层薄膜是一种潜在的高热稳定性和低功耗的相变存储材料.

The Ge50Te50/Zn15Sb85 nanocomposite multilayer films are prepared by the magnetron sputtering.The variation of resistance with temperature and with crystallization activation energy is studied.The multilayer structure of the section before and after the crystallization for Ge50Te50/Zn15Sb85 nanocomposite multilayer film is compared by transmission electron microscope.The phase change memory device based on[GT(7nm)/ZS(3nm)]5 is manufactured,and the electrical performance is measured.The fast switching speed,low operating power consumption,and good cycling performance are achieved for Ge50Te50/Zn15Sb85.Ge50Te50/Zn15Sb85,which is a kind of nanocomposite multilayer film,a promising phase change storage material with high thermal stability and low power consumption.