摘要
通过引入电流导通比率因子α(IA)模拟器件导通过程中电导调制效应的强度变化,并结合MOS控制晶闸管(MCT)的工作机理建立一种SPICE电路仿真模型。利用电流导通比率因子α(IA)不仅有效简化闩锁效应分析过程,而且直接量化导通压降和电流的关系,便于结合器件工作机理建立SPICE模型。最后,对该模型进行静态I-V特性和RLC单脉冲放电仿真测试,与Sentaurus软件仿真所得精确数据点比较具有较好的重合性,说明该模型结构对MCT器件应用于SPICE电路仿真试验具有一定的指导意义。
In this paper,a factor of current conduction ratio α(IA)is introduced to simulate the variation of conductivity modulation during the conduction of the device,and meanwhile,a SPICE model is established based on the working mechanism of MOS controlled thyristor(MCT).By utilizing the factor,it can not only simplify the analysis process of the latch-up effectively,but also quantify the relationship between the forward voltage and current to build the SPICE model based on the mechanism of device operation.At last,the simulation tests about the on-state characteristic and the discharging of RLC single-pulse had great coincidence with accurate data points from Sentaurus.And it also indicated that the introduced SPICE model has directive significance for the application of MCT in the SPICE simulation experiments.
作者
李青岭
陈万军
LI Qingling;CHEN Wanjun(State Key Laboratory of Electronic Thin Film and Integrated Devices of University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《电子与封装》
2020年第7期48-52,共5页
Electronics & Packaging