GaN HEMT双指热耦合关系的研究

Research on GaN HEMT Double Finger Thermal Coupling Relationship

为研究GaN HEMT多指结构器件中发热指之间的热耦合问题,该文通过分析基于有限元的双指结构器件的仿真数据,得到两发热指之间热耦合的强度与两者所处版图不同位置无关这一结果。通过建立热路模型分析论证这种热耦合关系产生的原因,最后通过模型进一步解释了器件整体热阻与发热指功率的关系。

In order to study the thermal coupling between multi-fingers in a GaN HEMT device,this paper analyzes the two-finger finite element simulation data to obtain that the strength of the thermal coupling between the two heating fingers is independent of the different locations in the layout.As a result,the reason for this thermal coupling relationship was derived by establishing a thermal circuit model.Finally,the relationship between the thermal resistance of the device and the power of the finger was further explained by the model.