GaAs/AlGaAs量子阱红外探测器的低电阻欧姆接触工艺研究

Study on Low Resistance Ohmic Contact Technology of GaAs/AlGaAs Quantum Well Infrared Detectors

介绍了GaAs/AlGaAs量子阱红外探测器(Quantum Well Infrared Photodetector,QWIP)的低电阻欧姆接触研究情况。结合热处理工艺,通过测试I-V特性对Ni/AuGe/Au金属体系的不同搭配进行了实验,确定了适合n+GaAs/AlGaAs的电极体系,并对沉积金属后的热处理条件进行了初步研究。在400℃、氮气氛围、60 s的条件下,采用传输线模型计算后,在n+GaAs(1×10^18 cm^-3)上取得了比接触电阻为3.07×10^-5Ω·cm2的实验结果。

The investigation of low resistance ohmic contact on GaAs/AlGaAs quantum well infrared detector is introduced.Combined with the heat treatment process,through testing the I-V characteristics,experiments are conducted on different combinations of Ni/AuGe/Au metal systems to determine the electrode system suitable for n+GaAs/AlGaAs.The heat treatment conditions after metal deposition are preliminary studied.Under the annealing conditions of 400℃,nitrogen atmosphere and 60 s,the transmission line model is used to obtain the specific ohmic contact resistance of 3.07×10^-5Ω·cm2 on n+GaAs(1×10^18 cm^-3).