CMOS图像传感器抗电离辐射加固技术研究

Study on Radiation-harden Technologies for CMOS Image Sensors

太空环境中的电离辐射会导致CMOS图像传感器性能退化,甚至造成永久性损毁。文章对CMOS图像传感器抗电离辐射加固技术进行了研究,从版图设计、电路设计等方面提出相应的抗辐射策略,并进行了总剂量和单粒子试验。试验结果表明,采用抗辐射加固技术设计制作的CMOS图像传感器具备抗总剂量和单粒子辐射能力,当总剂量达到100krad(Si)、单粒子辐射总注量达到1×10^7 p/cm^2时,器件的关键指标变化符合预期要求。

The radiation in the space environment will degrade the performance of CMOS image sensors,even result in permanent damage.In this paper,the radiation harden techniques are proposed from the aspects of layout and circuit designs,and experiments of total-dose and signal-event were carried out on the samples.Experimental results show the CMOS image sensors fabricated with radiation-harden technology realize total-dose resilience up to 100 krad(Si)and single-event effect resilience up to 1×10^7 p/cm^2,meeting the requirement on radiation hardened design.