基于AlN HTCC基板的宽带T/R组件设计

Design of a Wideband T/R Module Based on AlN HTCC Substrate

介绍了一种基于AlN HTCC基板MCM工艺的宽带(2~12 GHz)T/R组件的原理及设计方法,该T/R组件在一块AlN HTCC微波多层基板上通过焊接、胶接等工艺安装了电阻、电容、ASIC、MMIC等器件,通过对电路布局设计、HTCC性能分析、关键互联电路仿真,得到的T/R组件的主要性能为:在10 GHz工作带宽内发射功率大于8 W,接收增益大于25 dB,噪声系数小于4 dB,重量小于40 g。

The principle and design method of a wideband(2~12 GHz)T/R module were presented based on AlN HTCC substrate MCM process.The T/R module was installed resistance,capacitor,ASIC,MMIC and other devices on an AlN HTCC microwave multilayer substrate by welding and bonding.Through the design of circuit layout,HTCC performance analysis and simulation of key interconnect circuit,the main performance of the T/R module is as follows:output power is over8 W in 10 GHz working bandwidth,the receiving gain is greater than 25 dB,noise figure is less than 4 dB,and the weight is less than 40 g.