摘要
介绍了一种通过在LTCC银导体上化学镀镍钯金替代金导体的工艺方法。利用该方法制备LTCC微波基板可有效解决化学镀镍金在LTCC基板制备过程的工艺缺陷。通过性能测试可知,化学镀镍钯金LTCC基板平均金丝键合强度可达到305 mN,平均金带键合拉力均大于500 mN,平均芯片剪切强度达到5.28 kgf。利用化学镀镍钯金技术制备的LTCC基板性能良好,有效推进了LTCC基板的低成本化进程。
A new technology was proposed to replace the imported gold slurry by ENEPIG on LTCC domestic silver slurry. LTCC substrate ENIG plating defects could be effectively resolved by using the ENENPIG method.According to the performance test results,the average gold wire bonding strength of LTCC substrate after ENEPIG can reach 305 mN,the average gold band bonding tension is more than 500 mN,and the average chip shear strength reach 5.28 kgf. It is proved that LTCC substrate with good performance can be prepared by ENEPIG technology.This technology effectively promotes the low cost of the LTCC substrate.
作者
陈寰贝
孙林
谢新根
张超
戴雷
CHEN Huanbei;SUN Lin;XIE Xingen;ZHANG Chao;DAI Lei(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2020年第3期233-236,共4页
Research & Progress of SSE
关键词
化学镀
镍钯金
低温共烧陶瓷
低成本
electroless plating
nickel-palladium-gold
low temperature co-fied ceramic
low cost
