一种低插入损耗高隔离度射频开关的设计

Design of a Low Insertion Loss and High Isolation RF Switch

基于180 nm绝缘体上硅(SOI)CMOS工艺,设计并制作了一款50Ω吸收式单刀双掷射频开关。开关电路由两个对称的射频传输通道组成,在500 kHz^8 GHz频率内具备优异的隔离度及插入损耗性能。采用两级开关结构用于提高隔离度,并通过将电源管理电路的晶体管偏置在亚阈值区域以达到超低的功耗。测试结果表明,在6 GHz频点的插入损耗为0.55 dB,隔离度为53 dB,反射系数为-15 dB,0.1 dB压缩点的输入功率为33 dBm,而功耗不足300μW。该RF开关电路非常适用于4G/5G无线基础设施、卫星通信终端设备以及其他高性能射频应用系统。

Based on the 180 nm silicon-on-insulator(SOI) CMOS process, a 50 Ω absorptive single-pole double-throw RF switch was designed and fabricated. The switch circuit was comprised of two symmetric RF transmit channels and had excellent performances of isolation and insertion loss in the frequency range of 500 kHz to 8 GHz. Two-stage switch structure was adopted to improve isolation and ultra-low power consumption was achieved by biasing the power management circuit transistor at subthreshold region. The test results show that at 6 GHz the insertion loss is 0.55 dB, the isolation is 53 dB, the reflection coefficient is-15 dB, the input power is 33 dBm at 0.1 dB compression point, and the power consumption is less than 300 μW. The RF switch circuit is suitable for the 4 G/5 G wireless infrastructure, satellite communication terminal equipment and other high-performance RF applications.