GaN单晶中Mg含量的SIMS定量分析方法

Quantitative SIMS Analysis Method of Mg Content in GaN Single Crystal

GaN材料是研制微电子器件、光电子器件的新型半导体材料,在其单晶材料的研制过程中,掺杂剂Mg的含量对生长p型GaN有重要影响,所以对Mg浓度的精确测定至关重要。采用相对灵敏度因子法,以离子注入样品为参考样品,对GaN单晶中Mg元素含量的二次离子质谱(SIMS)定量分析方法进行了研究,并通过改变扫描面积,使GaN单晶中Mg元素浓度的检测限达到5.0×1015 cm-3。该方法具有高稳定性(精密度小于10%)和可靠性,在没有可溯源参考样品的情况下,可自制参考样品实现对GaN晶体中Mg含量的SIMS定量分析。该方法成为GaN单晶中Mg杂质含量的可行的检测方法之一。

GaN material is a new semiconductor material for developing microelectronic devices and optoelectronic devices. During the development of its single crystal material, the content of the dopant Mg has an important influence on the growth of p-type GaN, therefore the accurate determination of Mg concentration is crucial. The secondary ion mass spectrometry(SIMS) quantitative analysis method of Mg content in GaN single crystal was studied by using the relative sensitivity factor method and with the ion implantation sample as the reference sample. The detection limit of Mg content in GaN single crystal was up to 5.0×1015 cm-3 by changing the scanning area in the SIMS test. The quantitative SIMS analysis method has high stability(precision is less than 10%) and reliability, and can be used in the quantitative analysis of Mg content in GaN by SIMS with self made reference sample without traceable reference sample. This method has become one of the feasible detection methods for the content of Mg impurity in GaN single crystal.