摘要
High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.
作者
尹蕾
皮孝东
杨德仁
Lei Yin;Xiaodong Pi;Deren Yang(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China)
基金
Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0205704 and 2018YFB2200101)
the National Natural Science Foundation of China(Grant Nos.91964107 and 61774133)
the Fundamental Research Funds for the Central Universities,China(Grant No.2018XZZX003-02)
the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)
the Zhejiang University Education Foundation Global Partnership Fund.
