摘要
Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
作者
Shuyan Zhao
Yuxin Song
Hao Liang
Tingting Jin
Jiajie Lin
Li Yue
Tiangui You
Chang Wang
Xin Ou
Shumin Wang
赵舒燕;宋禹忻;梁好;金婷婷;林家杰;岳丽;游天桂;王长;欧欣;王庶民(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049 China;Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg 41296,Sweden)
基金
Project supported by the National Key Research and Development Program of China(Grant No.2017YFE0131300)
the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,and 61804157)
the Frontier Science Key Program of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC032)
the Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)
the Science and Technology Innovation Action Plan Program of Shanghai,China(Grant No.17511106202)
the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600)
the Sailing Program of Shanghai,China(Grant Nos.19YF1456200 and 19YF1456400)
the K C Wong Education Foundation(Grant No.GJTD-2019-11).
