摘要
The electronic and magnetic properties of strontium hexa-ferrite(SrFe12O19)are studied in pure state(SrFe12O19)and with dopant in the positions 2 and 3 of Fe atoms(SrGdFe11O19-I and SrGdFe11O19-Ⅱ,respectively)by utilizing a variety of the density functional theory(DFT)approaches including the Perdew-Burke-Ernzerhof generalized gradient approximation(PBE-GGA)and GGA plus Hubbard U parameter(GGA+U).The pure SrFe12O19 is a hard magnetic half-metal with an integer magnetic moment of 64.00μB,while using the GGA+U functional,the magnetic intensity increases,resulting in a magnetic semiconductor with a high integer magnetic moment of 120μB.By doping the Gd atom in the two different positions of Fe,the magnetic moment is increased to 71.68μB and 68.00μB,respectively.The magnetic moment increases and remains an integer;hence,SrGdFe11O19-Ⅱcan be very useful for application in magnetic memories.Moreover,applying the Hubbard parameter turns SrGdFe11O19-I and SrGdFe11O19-Ⅱto magnetic semiconductors with a magnetic moment of 124μB,and the energy gap of both doped structures at spin down is found to be less than the pure case.By studying the electronic density diagram of the atoms of the crystal,it is found that the major effect to create magnetization in the pure case is due to the Fe atom.However,in the doped case,the elements Gd and Fe have the highest moment in the crystal respectively.
