高调谐效率V型腔可调谐半导体激光器设计与研究

Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser

V型腔可调谐半导体激光器由于具备结构简单紧凑、性能优良等特点,在光通讯领域有着较大的应用潜力。然而,由于激光器外延结构热导率相近,用于波长调谐的热量大部分直接流失,激光器无法得到较高的调谐效率。本文通过在调谐区域加入隔热结构,设计了具有高调谐效率的V型腔可调谐激光器。利用由COMSOL Multiphysics建立的V型腔激光器温度模型,分析了隔热结构的加入对激光器各部分的温度影响。通过Rsoft建立的谐振腔光场分布,优化半波耦合器参数,使激光器具有最佳的模式选择性。结果表明,激光器主边模阈值增益差达到6.07 cm-1,调谐效率从0.165 nm/mW提升至0.3 nm/mW。同时,隔热结构的加入不会使激光器其他区域有明显的温升,器件性能受到的负面影响可以忽略。

V-cavity tunable semiconductor laser has great potential in optical network because of its advantages of simplicity,compactness and high performance.However,because the thermal conductivity of epitaxial structure is similar,most of the heat for wavelength tuning is lost directly,and so the tuning efficiency of laser is low.In this paper,a V-cavity laser with high tuning efficiency is designed by adding a heat insulation structure in the tuning region of the laser.Through the temperature model of V-cavity laser built by COMSOL Multiphysics,the effect of adding thermal insulation structure on the temperature of each part of the laser is analyzed.Through the optical field distribution established by Rsoft,the proper half wave coupler parameters are selected,so that the laser has the best mode selectivity.The results show that threshold gain difference between the lowest threshold mode and the next lowest threshold mode is 6.07 cm-1,and the tuning efficiency increases from 0.165 nm/mW to 0.3 nm/mW.Meanwhile,the addition of thermal insulation structure will not cause obvious temperature rise in other areas of the laser,and the negative impact on the device performance can be ignored.