一维In2O3纳米材料的制备与表征

由于一维半导体纳米材料独特的物理、化学性质,其在透明电极、光电子器件、气敏传感器、逻辑电路和太阳能电池等诸多领域呈现出广阔的应用前景,成为了近些年来纳米科技研究的热点之一。本文利用热蒸发法在镀金的硅(100)衬底上生长了纯净的In2O3纳米线。通过扫描电子显微镜(SEM),可以看到最终样品为In2O3纳米线;X射线衍射(XRD)分析证实所制备的材料为立方结构;由X射线能谱仪(EDX)可以看到,纳米线由In和O两种元素组成,为所要的纯净In2O3纳米线。

Due to the unique physical and chemical properties of one-dimensional semiconductor nanomaterials,it has shown broad application prospects in many fields such as transparent electrodes,optoelectronic devices,gas sensors,logic circuits,and solar cells,and has become a hot spot in nanotechnology research in recent years.In this paper,pure In2 O3 nanowires were grown on a gold-plated silicon(100)substrate using thermal evaporation.Through scanning electron microscope(SEM),it can be seen that the final sample is In2 O3 nanowire;X-ray diffraction(XRD)analysis confirmed that the material was cubic structure;Energy Dispersive X-Ray Spectrometer(EDX)spectrum results showed that the nanowire is composed of In and O,and it is the desired pure In2 O3 nanowire.