AlGaN/GaN HEMT氢气传感器室温下响应特性的研究

Study on Sensing Response of AlGaN/GaN HEMT-based Hydrogen Sensor at Room Temperatures

制作了基于AlGaN/GaN HEMT结构的微型氢气传感器。本文研究了室温条件下栅压与传感器氢气响应特性的关系。研究结果表明随着外加栅压(-2.5 V至0.5 V)的增大,传感器对氢气响应的灵敏度减小,最大灵敏度在阈值电压V G=-2.5 V处,传感器对25 ppm氢气响应的灵敏度为87.1%,响应时间为15 s。当V G=-2.5 V,V DS=6 V时,传感器对氢气响应的灵敏度随浓度的升高而增大,且呈对数关系。研究表明Pt/AlGaN/GaN HEMT结构的氢气传感器可应用于室温氢气检测,具有极高的应用潜力。

Miniature hydrogen sensors based on AlGaN/GaN high electron mobility transistor(HEMT)device were fabricated.The relationship between gate voltage and hydrogen response characteristics of the sensor at room temperature was investigated.The experimental results showed that with the increase of the gate voltage(-2.5 V to 0.5 V),the hydrogen response sensitivity of the sensor decreased,and the maximum sensitivity was at the threshold voltage V G=-2.5 V,the hydrogen response sensitivity for hydrogen concentration of 25 ppm can reach as high as 87.1%,and the response time was 15 s.When V G was fixed at-2.5 V,V DS=6 V,the hydrogen response sensitivity of the device increased with the increase of hydrogen concentration,the sensitivity of the device was linearly related to the logarithm of hydrogen concentration.The research showed that the Pt/AlGaN/GaN HEMT structure hydrogen sensor can be applied to the detection of hydrogen at room temperature and had good application potential.