无压低温烧结纳米银封装电力电子器件的进展与思考

Progress and Considerations on Pressure-less Low-temperature Sintering of Nano-silver for Packaging Power Electronic Devices

无压低温银烧结技术是高功率密度SiC器件的无铅化关键互连技术,对SiC功率模块的可靠性提升具有重要的意义。针对典型Si基功率模块封装连接工艺及其可靠性,阐述了当前无压低温纳米银烧封装技术的进展与思考:(1)讨论了电力电子器件封装连接可靠性的典型风险和原因;(2)介绍了无压低温连接技术的最新发展;(3)基于Si基典型功率模块封装向高可靠SiC功率模块转变过程中在封装结构和材料方面的需求,阐述了无压低温银烧结技术在引线型、平面型和双面冷却功率模块封装方面的进展;(4)提出无压低温银烧结技术当前有待解决的技术难题。

The pressure-less low-temperature silver sintering technology is a key lead-free interconnection technology for high-power density SiC devices,which is of significance for the reliability improvement of SiC power modules.Aimed at the typical Si-based power module packaging connection process and its reliability,the progress in and considerations on the pressure-less low-temperature nano-silver sintering packaging technology are expounded.First,the typical risks and causes of power electronic device packaging connection reliability are discussed.Second,the latest development of pressure-less low-temperature connection technology is introduced.Third,based on the requirements for packaging structure and materials in the transition process from typical Si-based power module packaging to high-reliability SiC power module,the progress in pressure-less low-temperature silver sintering technology is elaborated from the aspects of lead-frame,planar,and double-sided cooling power module packaging,respectively.Finally,the existing technical problems that need to be solved at present in the pressure-less low-temperature silver sintering technology are also pointed out.