期刊文献+

基于氮化镓功率器件的过流保护电路研究

Research on Over-current Protection Circuit Based on GaN Power Device
下载PDF
导出
摘要 提出了一种适用于高频场合下氮化镓GaN(gallium nitride)功率器件的过流保护电路。该保护电路在高达几百千赫甚至兆赫的开关频率下,通过检测氮化镓功率器件的漏-源电压实现对过流故障的识别,在故障下可迅速关断GaN器件进行保护。仿真和实验结果证明,该过流保护电路具有响应迅速、结构简单和抗干扰性强的优点,可有效提高氮化镓器件应用的可靠性。 A gallium nitride(GaN)based over-current protection circuit is proposed,which is suitable for high-frequency application scenarios.This circuit can identify the over-current fault by detecting the drain-source voltage of a GaN power device at a switching frequency of up to several hundred kHz or even 1 MHz,and it can quickly turn off the GaN device for protection under fault.Simulation and experimental results show that the proposed over-current protection circuit has advantages of fast response,simple structure and strong anti-interference,thereby effectively improving the reliability of the applications of GaN devices.
作者 张雅静 李建国 李艳 郑琼林 王久和 ZHANG Yajing;LI Jianguo;LI Yan;ZHENG Trillion Q;WANG Jiuhe(School of Automation,Beijing Information Science and Technology University,Beijing 100192,China;School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China)
出处 《电源学报》 CSCD 北大核心 2020年第4期53-57,共5页 Journal of Power Supply
基金 北京市自然科学基金资助项目(3204040/3202010) 国家自然科学基金资助项目(51777012/51477011) 北京信息科技大学促进高校内涵发展科研水平提高资助项目(2020KY NH209)。
关键词 高频 氮化镓 增强型 过流保护电路 high frequency gallium nitride(GaN) enhancement over-current protection circuit
  • 相关文献

参考文献1

二级参考文献19

  • 1顾亦磊,吕征宇,钱照明.一种新颖的三电平软开关谐振型DC/DC变换器[J].中国电机工程学报,2004,24(8):24-28. 被引量:64
  • 2金科,阮新波.复合式全桥三电平LLC谐振变换器[J].中国电机工程学报,2006,26(3):53-58. 被引量:51
  • 3Ye M, Xu P, Yang B, et al. Invest!gation of topology candidates for 48 V VRM[C]//Seventeenth Annual IEEE Applied Power Electronics Conference and Exposition. Dallas, TX, USA: IEEE, 2002: 699-705.
  • 4Ren Yuancheng, Xu Ming, Sun Julu, et al. A family of high power density unregulated bus converters[J]. IEEE Transactions on Power Electronics, 2005, 20(5) : 1045-1054.
  • 5Reusch D, Lee F C. High frequency isolated bus converter with gallium nitride transistors and integrated transformer [C]//2012 IEEE Energy Conversion Congress and Exposition (ECCE). Raleigh, NC, USAz IEEE, 2012: 3895-3902.
  • 6Huang D, Ji S, Lee F. LLC resonant converter with matrix transformer[J]. IEEE Transactions on Power Electronics, 2013, 29(8): 4339-4347.
  • 7Xi Youhao, Chert Min, Nielson K, et al. Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters[C]//2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition(APEC). Orlando, FL, USA: IEEE, 2012: 2467-2471.
  • 8Lee F C, Li Qiang. High-frequency integrated point-of- load converters: overview[J]. IEEE Transactions on Power Electronics, 2013, 28(9): 4127-4136.
  • 9Reusch D, Lee F C, Gilham D, et al. Optimization of a high density gallium nitride based non-isolated point of load module[C]//2012 IEEE Energy Conversion Congress and Exposition (ECCE). Raleigh, NC, USA: IEEE, 2012: 2914-2920.
  • 10Hughes B, Lazar J, Hulsey S, et al. GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1 MHz[C]//2012 Twenty- Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC). Orlando, FL, USA: IEEE, 2012: 2506-2508.

共引文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部