SiC晶体测温判读技术研究

Interpretation technology of temperature measurement based on SiC crystal

针对航空发动机热端部件表面温度准确测量的需求,开展了SiC微型晶体测温判读技术研究。采用中子辐照技术破坏SiC晶体的有序结构,使晶体内部产生缺陷,再通过退火处理消除晶体内部缺陷。拉曼光谱分析结果表明,晶体内部残余缺陷浓度随着退火温度的升高而降低。X射线衍射结果显示,样品的衍射角和半高宽分别随退火温度的升高以近似线性的趋势增大和降低。根据晶格参数可以得到温度标定数据库与标定曲线。采用Matlab编写了SiC晶体测温判读软件,判读软件的测温范围为500~1400℃,判读误差为0.447%。

In order to achieve accurate temperature measurement of aero-engine hot section surface,the interpretation technology of temperature measurement based on SiC micro-crystal was studied.The neutron irradiation technology was used to destroy the ordered structure of the SiC crystal,and defects were produced in the crystal.Then the internal defects of the crystal were eliminated gradually by annealing treatment.The results of Raman spectroscopy showed that the concentration of residual defects in the lattice decreased with the increase of annealing temperature.The results of X-ray diffraction showed that the 2θand FWHM values increased and decreased with approximate linear characteristic as the annealing temperature increased respectively.According to the lattice parameters of the samples,the calibration database was calculated by empirical formula and the calibration curve was drawn.The SiC crystal temperature measurement interpretation software was compiled by Matlab.The temperature range of the interpretation software is 500~1400℃,and the interpretation error is 0.447%.