液相还原联用吸附技术处理废气中氮氧化物

Treatment of nitrogen oxides in waste gas by liquid phase reduction combined with adsorption technology

在半导体硅片的制作过程中,会产生大量氮氧化物,对环境造成严重的污染,同时也对人体产生极大的危害。本文结合半导体产业特点设计的液相还原技术结合干式吸附技术通过单因素试验考察了pH值、ORP值、风压三个参数对系统去除氮氧化物效率的影响;并利用响应面法,以废气中氮氧化物去除率为相应目标,优化了液相还原系统的工艺参数。在pH值为13;ORP值为-390;风压为176.96 Pa时,液相还原系统对废气中氮氧化物的去除率可达96%以上。经检测,排出废气的氮氧化物含量为4~5 mg/m^3,完全符合国家及地方要求,为厂区及周边环境提供保障。

In the manufacturing process of semiconductor silicon wafers,a large number of nitrogen oxides will be produced,which will cause serious pollution to the environment and great harm to human body.In this paper,Combined with the characteristics of semicondurtor industry,the wet reduction technology&dry adsorption technology was designed to investigate the effects of pH value,ORP value and wind pressure on the nitrogen oxide removal efficiency of the system through single factor tests,taking the removal rate of nitrogen oxides in waste gas as the corresponding goal,the process parameters of liquid phase reduction system were optimized.When the pH value is 13,the ORP value is-390,and the wind pressure is 176.96 Pa,the removal rate of nitrogen oxides in the waste gas by the liquid phase reduction system can over 96%.Tested by the Beijing Municipal Bureau of Environment and Ecology and the third-party testing unit,the content of nitrogen oxides in the exhaust gas is 4~5 mg/m^3,which fully meets the national and local requirements and provides protection for the plant and its surrounding environment.