摘要
分析了Ba Ti1-xNbxO3(0≤x≤0.04)陶瓷样品中存在的补偿机制及其结构与介电性能的变化。结果表明:Nb5+的掺入没有引起第二相的生成,并能减小陶瓷晶粒尺寸;Nb5+离子的加入有利于Ba Ti O3陶瓷从正常铁电体向弛豫铁电体转变,降低介电常数峰值温度(Tm),提高室温介电常数,减小剩余极化强度(Pr)和矫顽场(Ec)。通过Gulp模拟并分析得出当Nb5+掺入后,主要以空位进行补偿,且以钡空位补偿为主,形成缺陷簇。
In this paper,the structure,dielectric properties and the compensation mechanism of Ba Ti1-xNbxO3(0≤x≤0.04)ceramics were investigated.The results revealed that there is no second phase and the grain size of ceramics can be reduced when Nb5+dopped Ba Ti O3 ceramics.The addition of Nb5+ions is beneficial to Ba Ti O3 ceramics transform from normal ferroelectrics to relaxation ferroelectrics,shift the dielectric peak temperature(Tm)to low temperature,increase the dielectric constant of room temperature and decrease the Pr and Ec.The main compensation mechanism is barium vacancy compensation mechanism by the Gulp calculation analysis.Defect cluster in the crystal mainly is.
作者
刘杨琼
丁士华
江俊俊
那文菊
赵杨军
LIU Yangqiong;DING Shihua;JIANG Junjun;NA Wenju;ZHAO Yangjun(Chengdu Hongke Electronic Technology Co,Ltd,Chengdu 610100,China;School of Materials Science and Engineering,Xihua University,Chengdu 610039,China)
出处
《中国陶瓷》
CAS
CSCD
北大核心
2020年第7期38-44,共7页
China Ceramics
