二元组合材料芯片电化学性能的高通量表征

High-Throughput Electrochemical Characterization of Binary Combinatorial Materials Chip

尝试了利用丝束电极方法(wire beam electrode,WBE)对Cu-Cr,Ni-Cr系二元成分连续分布组合材料芯片的腐蚀电位、电偶电流密度等电化学性能进行了高通量测试和表征,并与常规电化学方法(交流(AC)阻抗、电偶腐蚀实验)的结果进行了对比。丝束电极方法测试二元组合材料芯片的结果表明,对于Cu-Cr系二元组合材料芯片而言,随着组合材料芯片中Cr含量的不断增加,腐蚀电位不断正移,电偶电流密度不断减小,耐蚀性能增强;对于Ni-Cr系二元组合材料芯片而言,随着组合材料芯片中Cr含量的不断增加,腐蚀电位不断正移,耐蚀性能增强。同时,电偶电流密度也随着Cr含量的增加而增大,这主要与Cr含量较高的芯片区域中出现第二相有关。丝束电极方法在100 s内就完成了对二元组合材料芯片的高通量电化学测量,且与常规电化学方法测试的结果一致,证明了丝束电极方法作为一种新的高通量电化学表征方法具有可行性。

The wire beam electrode(WBE)method has been developed to characterize the electrochemical properties of Cu-Cr and Ni-Cr combinatorial materials chip,whose results has been compared with the results of conventional electrochemical methods alternating current(AC)impedance,galvanic corrosion experiments.As investigated,the corrosion potential increased and galvanic current decreased with higher Cr content in Cu-Cr combinatorial materials chip,resulting in the enhancement of corrosion resistance.The corrosion potential increased with higher Cr content in Ni-Cr combinatorial materials chip,resulting in the enhancement of corrosion resistance.But galvanic current also increased with higher Cr content because of second phase in Ni-Cr combinatorial materials chip.The measurement process of the wire beam electrode method was completed within 100 s,and the results were consistent with those obtained from the conventional electrochemical method,verifying the feasibility of the wire beam electrode method as a high-throughput electrochemical measurement method.