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High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films 被引量:1

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摘要 Up to now,substantial work has been carried out on different materials-based diluted magnetic semiconductors,and great achievements have been made on increasing Curie temperature of these materials.However,the carrier mobility of the magnetic semiconductors is still low due to various scatterings,and rare studies have been performed to effectively enhance the carrier mobility.As we know,both high Curie-temperature ferromagnetism and high carrier mobility are important characteristics for ideal magnetic semiconductors,which are essential for spin polarized current generation and transport in real spintronic semiconducting devices.
作者 Jianhua Zhao
出处 《Journal of Semiconductors》 EI CAS CSCD 2020年第8期2-2,共1页 半导体学报(英文版)
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