具有双向开关特性的隧穿场效应晶体管

A TFET with Bidirectional Switching Characteristics

基于带带隧穿原理,提出一种具有双向开关特性的隧穿场效应晶体管。不同于传统隧穿晶体管的PIN结构,新结构具有双向导通性,源漏区可互换,对反向泄漏电流有更好的抑制效果,同时具有低功耗和低亚阈值摆幅的优点。其对称的结构能更好兼容CMOS工艺,设计灵活性更好。通过Silvaco TCAD软件对器件3D结构进行I-V特性仿真,分析各器件参数改变对器件开关电流比(IonIoff)、亚阈值摆幅(SS)、反向泄漏电流和正向导通电流等电学特性的影响,从而改善器件特性,优化器件结构。

A TFET with bidirectional switching characteristics is proposed based on the principle of Band-to-Band tunneling. Different from the PIN structure of the traditional tunneling transistor, the new structure has bidirectional conduction, interchangeable source and drain regions, better suppression effect on reverse leakage current, and the advantages of low power consumption and low subthreshold swing. Its symmetrical structure is more compatible with CMOS process and has better design flexibility. I-V characteristic simulation of the 3 D structure of the device is carried out by Silvaco TCAD software, and the influence of various device parameter changes on the electrical characteristics of the device such as switching current ratio(Ion-Ioff), subthreshold swing(SS), reverse leakage current and forward conduction current is analyzed, thus improving the device characteristics and optimizing the device structure.