期刊文献+

一种快速启动的电容式电荷泵设计 被引量:3

Design of a Fast-Start Capacitive Charge Pump
下载PDF
导出
摘要 针对电荷泵在输出负载电容大的情况下启动速度慢、容易增加噪声和系统功耗的问题,设计一种快速启动的电容式电荷泵电路。该电路包括主电荷泵、逻辑控制电路、辅助电荷泵、稳压电路和升压电路。其中,逻辑控制电路根据主电荷泵的输出控制辅助电荷泵的开闭,辅助电荷泵根据逻辑控制电路的控制信息控制升压电路的开闭,借助稳压电路减少主/辅电荷泵的输出纹波,稳定输出电压,最终由升压电路实现输出端电压升高。该电路还可做到在第一使能信号到来时,通过逻辑电路和辅助电荷泵控制NMOS器件的通断,使电荷泵第一输出端电压迅速上升到电源电压VCC,而没有NMOS器件传递高电压阈值损失的问题,极大缩短输出负载电容达到稳定值的时间,达到快速启动的目的。 In order to solve the problems that the charge pump starts slowly and easily increases noise and system power consumption when the output load capacitance is large, a capacitor charge pump circuit with fast start-up is designed. The circuit includes a main charge pump, a logic control circuit, an auxiliary charge pump, a voltage stabilizing circuit and a boosting circuit. The logic control circuit controls the opening and closing of the auxiliary charge pump according to the output of the main charge pump, and the auxiliary charge pump controls the opening and closing of the booster circuit according to the control information of the logic control circuit. The output ripple of the main/auxiliary charge pump is reduced by means of the voltage stabilizing circuit, and the output voltage is stabilized. The design can control the on-off of NMOS devices by logic circuit and auxiliary charge pump when the first enable signal comes, so that the voltage of the first output terminal of the charge pump quickly rises to the power supply voltage VCC, without the problem of high voltage threshold loss of NMOS devices, which can greatly shorten the time for the output load capacitance to reach a stable value and achieve the purpose of fast start.
作者 林雨佳 范超 LIN Yujia;FAN Chao(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110032,China)
出处 《微处理机》 2020年第4期23-25,共3页 Microprocessors
关键词 电荷泵 快速启动 低功耗 低噪声 逻辑控制 升压 Charge pump Fast-start Low power consumption Low noise Logic controlling Voltage boost
  • 相关文献

参考文献3

二级参考文献23

  • 1陈柬,陆治国.移相全桥软开关变换器拓扑分析[J].重庆大学学报(自然科学版),2005,28(12):27-31. 被引量:8
  • 2Vicky O'Donovan,Anne Deignan. Investigation of High-Voltage MOSFET Reliability in IKIRK Region[J]. IEEE Trans. Electron Devices and Materials Reliability [ J ]. 7 (1), March 2007.
  • 3Shiyang Zhu, Anri Naka]ima, Takuo Ohashi, and Hideharu Miyake. Interface Trap Generation Induced by Charge Pumping Current Under Dynamic Oxide Field Stresses[J]. IEEE Electron device Letters, vol. 26, No. 3, March 2005.
  • 4H. C. Lai,N. K. Zous,W. J. Tsai, T. C. Lu,Tahiii Wang,Y. C. King,Sam Pan. Reliable Extraction of Inter{ace States From Charge Pumping Method in Ultra-Thin Gate Oxide MOSFET's [J]. IEEE 2003.
  • 5J-J. Shaw, Ken Wu. Determination of Spatial Distribution of Interface States on Submicron, Lightly Doped Drain Transistor by Charge Pumpiag Measurement[J]. IEDM, 1989. p. 83.
  • 6R. E. Paulsen and M. H. White. Theory and Application of Charge Pumping for the Charaterization of Si SiO Interface and Near-Interface Oxide Traps[J]. IEEE Trans. Electron Devices, vol. 41,1994. p. 1213.
  • 7Daniel Bauza and Yves Maneglia. In-Depth Exploration of Si-SiO2 Interface Traps in MOS Transistors Using the Charge Pumping Technique[J]. IEEE Trans. Electron Devices, vol. 44, No. 12,December, 1997.
  • 8M. G. Ancona, N. S. Saks and D. McCarthy. Lateral Distribution of Hot Carrier Induced Interface Traps in MOSFET's[J]. IEEE Trans. Electron Devices, vol. ED-35 ,p. 2221,1988.
  • 9Chen C and Ma T P. Direct Lateral Profiling of Both Interface Traps and Oxide Charge in Thin Gate MOSFET Devices[C]// 1996 Symp. VLSI Technology, Digest of Technical Papers, 1996,p. 230, (IEEE Cat. no. 96CH35944).
  • 10Tanzawa T, Tanaka T, Takeuchi T and Nakamura K, Circuit techniques for a 1.8 V only NAND Flash Memory[J]. IEEE J. Solid-State Circuits, 2002,37 ( 1 ) : 84-89.

共引文献4

同被引文献18

引证文献3

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部