密封器件腔体内水汽和氢气含量的控制方法

A Method for Water Vapor and Hydrogen Content Controlling in Sealed Device Cavity

随着大规模集成电路的发展,芯片面积逐渐增大引起器件内部腔体体积的增加,使水汽、氢气含量变得更难控制,由于腔内水汽和氢气的产生机理不同,单一控制方法难以达到理想的结果,针对此类问题,研究一种密封器件封装腔体内部气氛的控制方法,采用多重手段对各项影响要素进行逐一控制,根据水汽和氢气的来源对管壳盖板原材料进行高温预烘焙处理以清除氢气,在密封前对待封盖的组装半成品进行预烘焙以清除水汽,并在密封后、筛选试验后和长期放置后进行内部气氛检测。对比结果表明,采用新方法控制的密封器件内部的水汽、氢气的含量均控制在500ppm以下,与传统方法相比有大幅度的改善。

With the development of large-scale integrated circuits, the increasing chip area leads to the increase of the internal cavity volume of the device, which makes it more difficult to control the content of water vapor and hydrogen. Because of the different generation mechanisms of water vapor and hydrogen in the cavity, it is difficult for a single control method to achieve ideal results. Aiming at such problems, a control method for the internal atmosphere of the sealed device packaging cavity is studied,and various influencing factors are controlled one by one by multiple means. According to the sources of water vapor and hydrogen, the raw materials of shell cover plate are pre-baked at high temperature to remove hydrogen, the assembled semi-finished products to be sealed are pre-baked to remove water vapor before sealing, and the internal atmosphere is detected after sealing, screening test and long-term storage. The comparison results show that the contents of water vapor and hydrogen in the sealed device controlled by the new method are all below 500 ppm, which is greatly improved compared with the traditional methods.