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基于掩蔽因子算法的集成电路级SEU仿真技术研究 被引量:2

Research on integrated circuit SEU simulation technology based on masking factor algorithm
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摘要 本文通过分析集成电路级单粒子效应的表征形式和传播规律,建立了一套科学合理、操作性强的单粒子效应仿真和预估方法.在对集成电路级单粒子效应掩蔽因子计算方法、单粒子仿真评估流程研究的基础上,设计了基于故障注入方式的单粒子效应掩蔽因子计算方法以及仿真软件.本文利用该仿真方法对一款65 nm CMOS体硅工艺的ASIC电路进行软件仿真.仿真结果与试验结果分析表明,该仿真方法可以用于大规模集成电路的单粒子效应仿真,并对试验结果具有一定的预估能力. By analyzing the characterization form and propagation law of single event effect for integrated circuit, this paper establishes a set of SEE simulation and evaluation method which has the advantages of scientific and reasonable, simple operation. Based on the research of integrated circuit SEE masking factor calculation method and simulation evaluation process, the SEE masking factor calculation method and simulation software based on fault injection method are designed. In this paper, a 65 nm CMOS bulk silicon process ASIC circuit is simulated in software by using this simulation method. The analysis of the software simulation and SEE test results show that the simulation method can be used for SEE simulation of large-scale integrated circuits and it has certain predictive ability for SEE test results.
作者 武永俊 郑宏超 李哲 赵旭 WU Yong-jun;ZHENG Hong-chao;LI Zhe;ZHAO Xu(BeijingMicroelectronics TechnologyInstitute,Beijing100076,China)
出处 《微电子学与计算机》 北大核心 2020年第8期61-65,共5页 Microelectronics & Computer
关键词 集成电路级仿真 单粒子翻转 掩蔽因子 集成电路 Integrated circuit simulation Single event effect Masking factor Integrated circuit
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