摘要
An ultra-thin Co2MnSi(0.5 nm)/Mn Ga(1.5 nm) bilayer capped with Pt(5 nm) has been successfully grown by molecular-beam epitaxy.It is a potential candidate of synthetic antiferromagnets due to antiferromagnetic coupling between Co2MnSi and MnGa,which is a promising skyrmion-racetrack-memory medium without skyrmion Hall effect after capping with a Pt layer.Unusual humps in transverse Hall resistance loops are clearly observed in the temperature range from 260 to 400 K.This anomaly is generally attributed to topological Hall effect,but other than that,we prove that non-uniform rotation of magnetic moments in the bilayer with magnetic field sweeping is also a possible mechanism contributed to the unusual hump.
作者
Shan Li
Jun Lu
Lian-Jun Wen
Dong Pan
Hai-Long Wang
Da-Hai Wei
Jian-Hua Zhao
黎姗;鲁军;文炼均;潘东;王海龙;魏大海;赵建华(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China;Beijing Academy of Quantum Information Science,Beijing 100193,China)
基金
Supported by the National Program on Key Basic Research Project under Grant No.2018YFB0407601
the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant Nos.XDB44000000 and QYZDY-SSW-JSC015
the National Natural Science Foundation of China under Grant Nos.11874349 and 11774339。
