摘要
The ternary topological insulators Bi2Se3-xTex have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi2Se3-xTex thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0<x<1,and this is also valid for Se substituting Te at 2<x<3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.
作者
Yizhe Sun
Moorthi Kanagaraj
Qinwu Gao
Yafei Zhao
Jiai Ning
Kunpeng Zhang
Xianyang Lu
Liang He
Yongbing Xu
孙逸哲;Moorthi Kanagaraj;高钦武;赵亚飞;宁纪爱;张昆鹏;陆显扬;何亮;徐永兵(National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;York-Nanjing Joint Center(YNJC)for Spintronics and Nano-engineering,University of York,York YO105DD,United Kingdom;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)
基金
Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300803)
the National Natural Science Foundation of China(Grant Nos.61474061,61674079,and 61974061)
the Jiangsu Shuang Chuang Program and the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。
