MnS、CdS的压致导电性能变化

Pressure-induced Changes in Electrical Conductance of MnS and CdS

将金刚石对顶砧(DAC)技术与传统电学测试手段中的线性扫描相结合,研究了温度和压力对过渡金属硫族化合物MnS和CdS导电性能的影响。结果表明:在室温附近,当压力为28.3 GPa时,立方岩盐相的MnS发生了从半导体到金属体的转变,且该转变并非由结构相变引起;然而,对于六方纤锌矿相的CdS,在压力高达42.2 GPa时,并未发生半导体向金属体的变化。研究结果将对过渡金属硫族化合物在光、电催化和电池等方面的开发应用提供必要的基础。

The effects of temperature and pressure on the electrical conductance of the transition metal chalcogenides MnS and CdS were studied by combining diamond anvil cell(DAC)technique with electrical linear sweep voltammetry.It is found that near room temperature,with a pressure of 28.3 GPa,the initially cubic rocksalt phase of MnS changes from a semiconductor to a metallic conductor,which is not associated with any structural phase change.However,for the initially hexagonal wurtzite phase of CdS,with a pressure up to 42.2 GPa,there is no semiconductor-to-metallic change.This research provides fundamental knowledge for the development of applications of transition metal chalcogenides in photocatalysis,electrocatalysis and batteries.