摘要
Two-dimensional(2D)transition metal dichalcogenides(TMDCs)semiconductors,such as monolayers of molybdenum disulfide(MoS2)and tungsten disulfide(WS2)can potentially serve as ultrathin channel materials for building short channel field-eflect transistors(FETs)to further extend Moore's Law.It is essential to develop controllable approaches for the syntliesis of large single crystals of these 2D semiconductors to promote their practical applications in future electronics.In this short review,we summarized the recent advances on the chemical vapor deposition(CVD)of single crystalline semiconducting 2D TMDCs with a large size.We first discussed the driving force and urgent demands on developing controllable approaches for the growth oflarge 2D TMDCs single crystals and then summarized the current strategies and representative studies on the CVD growth of large 2D single crystals.Finally,we discussed the challenges and future directions in this topic.
基金
Supported by the National Natural Science Foundation of China(Nos.21875127,21925504)
the Tsinghua University Initiative Scientific Research Program,China.