摘要
石墨烯-硅肖特基结太阳电池的开路电压、短路电流密度较低,其主要是受到本征石墨烯较小的功函数及较大的薄膜电阻的影响。针对这些问题,该文基于实验报道的石墨烯和晶硅电学参数,利用AFORS-HET软件对石墨烯-硅肖特基结太阳电池进行仿真模拟。模拟结果表明,石墨烯层中的受主浓度、功函数、及禁带宽度的增加都能提高开路电压。而晶硅层施主浓度的提升则会使开路电压下降,随着晶硅施主浓度的增加,开路电压从494.1 mV下降到386.6 mV。最后对晶硅及石墨烯层的厚度优化,电池效率达到11.92%,为目前报道此种结构电池的模拟最高值。
Due to the small work function and large resistance of intrinsic graphene,graphene-silicon Schottky junction solar cells have low VOC and JSC.For those problems,AFORS-HET is used to simulate the graphene-silicon Schottky junction solar cells.The simulation results show that the VOC can be improved with the increase of the band gap,acceptor concentration and work function of graphene.With the increase of the donor concentration of crystal silicon,the VOC is reduced from 494.1 mV to 386.6 mV.Finally,optimum efficiency of 11.92%has been achieved after simulating the thickness of crystal silicon and graphene layer,which is the maximum value of this kind of structure reported at present.
作者
孔鑫燚
宋雪梅
张林睿
高红丽
张永哲
严辉
Kong Xinyi;Song Xuemei;Zhang Linrui;Gao Hongli;Zhang Yongzhe;Yan Hui(College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China;College of Applied Sciences,Beijing University of Technology,Beijing 100124,China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2020年第7期190-195,共6页
Acta Energiae Solaris Sinica
基金
国家自然科学基金(11574014)。
