高速低功耗GaN功率放大器调制器

High Speed and Low Power GaN Power Amplifier Modulator

为了满足现代雷达调制速度需求,文章基于CMOS工艺设计了一种高速低功耗GaN功率放大器调制器芯片.芯片采用栅极调制方式,调制频率高达10 MHz.调制输出在正常栅压Vg和-5 V之间,Vg采用五位并行数字控制位编程输出,输出范围在-3.2 V到-1.2 V之间,覆盖了GaN放大器栅极所需驱动电压的所有范围.测试结果表明:接20 W GaN功率放大器时,调制上升时间为2.8 ns,下降时间2.0 ns,10 MHz工作频率下功耗5 mA.此芯片采用CMOS工艺流片,芯片面积2.4 mm×3.2 mm.

A fast low power modulator for GaN amplifier was designed using CMOS process in order to satisfy modern radar.Gate modulation was used and the modulating rate reached 10MHz.Gate voltage switches between Vg and-5 V,and Vg is programed output between-3.2 V and-1.2 V which covers all the gate voltage used by GaN amplifier.With the 20 W GaN amplifier load measurements results show that the gate modulator rising time is 2.8 ns and falling time is 2.0 ns.The power consumption is 5 mA under 10 MHz.This chip tapes out with CMOS process and the die area is 2.4 mm×3.2 mm.