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Low-power electro-optic phase modulator based on multilayer graphene/silicon nitride waveguide

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摘要 Electro-optic modulator is a key component for on-chip optical signal processing.An electro-optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation.Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode.The impact of multilayer graphene on the performance of phase modulator is studied comprehensively.Simulation results show that the modulation efficiency improves with the increment of graphene layer number,as well as the modulation length.The 3-dB bandwidth of around 48 GHz is independent of graphene layer number and length.Compared to modulator with two-or four-layer graphene,the six-layer graphene/silicon nitride waveguide modulator can realizeπphase shift at a low-power consumption of 14 fJ/bit when the modulation length is 240μm.
作者 姬兰婷 陈威 高阳 许言 吴锜 王希斌 衣云骥 李宝华 孙小强 张大明 Lanting Ji;Wei Chen;Yang Gao;Yan Xu;Chi Wu;Xibin Wang;Yunji Yi;Baohua Li;Xiaoqiang Sun;Daming Zhang(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science&Engineering,Jilin University,Changchun 130012,China;Institute of Marine Science and Technology,Shandong University,Qingdao 250100,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第8期302-309,共8页 中国物理B(英文版)
基金 the National Key Research and Development Program of China(Grant No.2019YFB2203001) the National Natural Science Foundation of China(Grant Nos.61675087,61875069,and 61605057) the Science and Technology Development Plan of Jilin Province,China(Grant No.JJKH20190118KJ).
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