小间距红外探测器读出电路铟凸点制备技术

ROIC indium bump fabrication process for small pixel pitch infrared detector

介绍了一种用于10μm小间距碲镉汞探测器铟凸点的制备工艺。新工艺有别于常规的剥离法,采用离子刻蚀手段对金属铟进行精确刻蚀,从而制备出高度大于6μm且非均匀性小于±5%的10μm小间距红外探测器读出电路铟凸点,解决了传统工艺制备小间距铟凸点时高度不够且差异过大、易相互粘连等问题,大幅度提高了小间距红外探测器在互连工艺段的成功率。

In this study,a new ROIC indium bump fabrication process for HgCdTe detector with a spacing of 10μm between bumps is developed.Unlike the conventional stripping method,the ion etching method is used to precisely etch the indium metal.The developed method achieves taller indium bumps(>6μm)with lower nonuniformity(<±5%).This new fabrication process well solved the problem of insufficient height,lower uniformity and adhesion of indium bumps with small spacing,which greatly improved the success of flip-chip bonding of small pixel pitch infrared detector.