期刊文献+

高功率准连续半导体激光阵列中应变对独立发光点性能的影响 被引量:2

Influence of Strain on Performance of Independent Emitters in High Power Quasi-continuous Semiconductor Laser Array
下载PDF
导出
摘要 为了解决阵列中每个发光点性能分布不均的问题,研究了微通道水冷封装的960nm半导体激光器阵列,阵列包含38个发光点,腔长为2mm,在驱动电流为600A、占空比为10%的条件下,输出的峰值功率达到665.6 W,电光转换效率为63.8%,中心波长为959.5nm.通过对应力的理论分析,给出了各个发光点应变的表达式;通过搭建单点测试系统获得阵列中每个发光点的阈值电流、斜率效率、光谱和功率等光电特性;结合应变理论分析可知,器件中发光点的性能与应变大小和类型密切相关,压应变会导致器件波长蓝移、阈值电流降低、功率和斜率效率升高,张应变会导致波长红移、阈值电流升高、功率和斜率效率降低.研究表明,影响器件内部发光点的性能不仅与热效应有关,而且与封装后残余的应变密切相关,通过应力的分布可以预测阵列性能的变化规律,可为高峰值功率、高可靠性的半导体激光阵列的研制提供参考. In order to study the issues of non-uniform performance of the emitters in laser bars,960 nm laser bars with 38 emitters and cavity length of 2 mm packaged by the microchannel cooler were experimentally studied.The peak output power reaches 665.6 W,the electro optic conversion efficiency is 63.8%,and the centroid wavelength is 959.5 nm under the driving current of 600 A and the duty ratio of 10%.Firstly,theoretical analysis was made to find out the relationship between the external stress and laser's parameter changes.Then,the laser photoelectric characteristics parameters such as threshold current,slope efficiency,spectrum and optical power were measured via the test setup.From external stress theory,it is clear that external stress can significantly affect the laser's parameter performance.Specifically,compressive strain will cause blue shift in wavelength,decrease in threshold current,and increase in laser and slope efficiency;tensile strain by contrast,will have completely opposite effects on the laser performance.Studies have shown the performance that affects the internal emitters is not only thermal effects,but also residual strain after packaging.The distribution of stress can basically predict the pattern of array performance,which will provide a reference for the development of high peak power,high reliability semiconductor laser arrays.
作者 李波 王贞福 仇伯仓 杨国文 李特 赵宇亮 刘育衔 王刚 白少博 LI Bo;WANG Zhen-fu;QIU Bo-cang;YANG Guo-wen;LI Te;ZHAO Yu-liang;LIU Yu-xian;WANG Gang;BAI Shao-bo(State Key Laboratory of Transient Optics and Photonics,Xi’an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi’an 710119,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处 《光子学报》 EI CAS CSCD 北大核心 2020年第9期19-26,共8页 Acta Photonica Sinica
基金 国家自然科学基金(No.61504167) 陕西省自然科学基金(Nos.2019ZY-CXPT-03-05,2018JM6010,2015JQ6263) 陕西省科技厅人才项目(No.2017KJXX-72)。
关键词 高功率半导体激光阵列 独立发光点 应变 微通道 光电特性 High-power semiconductor laser array Independent emitter Strain Microchannel Photoelectric characteristics
  • 相关文献

参考文献5

二级参考文献38

  • 1李庚伟,吴正龙,邵素珍,张建辉,刘志凯.氧离子束辅助激光淀积生长ZnO/Si的研究[J].材料导报,2005,19(2):109-111. 被引量:5
  • 2高松信,魏彬,吕文强,武德勇,邵冬竹,左蔚.高功率二极管激光器失效特性研究[J].强激光与粒子束,2005,17(B04):97-100. 被引量:11
  • 3陈文兰,袁杰,齐向晖,伊林,汪中,刘新元,陈徐宗.外腔半导体激光器设计与高次谐波稳频[J].中国激光,2007,34(7):895-900. 被引量:6
  • 4Dubravka Lisak, Daniel T. Cassidy, Alan H. Moore. Bonding stress and reliability of high power GaAs-based lasers[J]. IEEE Transaction on Components and Packaging Technologies, 2001, 24(1):92-98
  • 5Paul D. Colbourne,Daniel T. Cassidy. Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes[J].IEEE J. Quantum Electron., 1991, QE-21(4):914-920
  • 6C. Ryan Feeler.Analysis of laser diode bar degradation[D]. University of Missouri-Rolla, 2006, UMI Number:3244594
  • 7Paul D. Colbourne, Daniel T. Cassidy. Imaging of stresses in GaAs diode lasers ising polarization-resolved photoluminescence[J]. IEEE J. Quantum Electron., 1993,29(1):62-68
  • 8Moshe Levy, Yuri Berk, Yoram Karni et al.. Effect of compressive and tensile strain on the performance of 808 nm QW high power laser diodes[C]. SPIE,2006,6104: 61040B
  • 9江剑平.半导体激光器原理[M].北京:电子工业出版社, 2002. 211-214
  • 10Kimio Shigihara. Estimation of strain arising from the assembling process and influence of assemblin materials on performance of laser diodes[J]. Appl. Phys., 1995, 78(3):1419-1423

共引文献27

同被引文献27

引证文献2

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部