太阳能电池用硅晶片隐形缺陷检测技术研究

Research on Hidden Defect Detection Technology of Silicon Wafer for Solar Cell

硅晶片是一种在集成电路及光伏太阳能等行业的应用非常广泛的材料,而隐形缺陷是影响太阳能电池用硅晶片质量的重要因素之一。在硅晶片外因诱导光子辐射复合理论基础上,通过将硅晶片电致发光检测结果与硅晶片I-V特性检测结果进行对比分析,验证了所开发检测系统的可靠性和准确性,证明所开发的隐型缺陷检测成像系统可以应用于太阳能电池组件隐型缺陷检测,是一种性价高且在具有良好市场应用前景的检测技术。

The silicon wafer is widely used integrated circuit and solar photo-voltaic industry. However,the concealed defect is one of the important factors that influence the quality of the silicon wafer of solar cell. Based on the theory of photon recombination induced by external factors in silicon wafer,the reliability and accuracy of the developed detection system are verified by comparing the detection results of electroluminescence and I-V characteristics of silicon wafer. It is proved that the developed concealed defect detection imaging system can be applied to the hidden defect detection of solar cell modules,which is a kind of great detection technology with high cost performance and good market application prospect.