摘要
为了评估实际制备中工艺偏差对此前设计的Si/SiO2-InP微柱腔性能的影响,采用了基于有限时域差分法的模拟仿真,从工艺缺陷以及工艺误差两个角度,模拟了非理想工艺条件对Si/SiO2-InP微柱腔性能的影响。结果表明,在目前可达到的加工精度下,如椭圆因子为0.1、锥形侧壁角度为3°、尺寸误差为5%,Si/SiO2-InP微柱腔仍能保持满足应用需求的性能,证明了设计的1.55μm量子点单光子源有很高的鲁棒性。该研究为通信波段单光子源提供了切实可行的方案。
In order to the evaluate the non-ideal fabrication on the performance of our Si/SiO2-InP microcavity,a simulation based on the finite difference time domain method was used.From the perspective of process defects and process errors,the effects of non-ideal process conditions on the performance of Si/SiO 2-InP micro-pillar cavities were simulated.The simulation results suggest the robustness against processing imperfection and the application feasibility of the hybrid Si/SiO2-InP micropillar cavities as 1.55μm quantum dot single photon sources to be applied in silica-fiber-based quantum information processing.
作者
黄帅
张伟
席琪
赵新华
谢修敏
徐强
周强
宋海智
HUANG Shuai;ZHANG Wei;XI Qi;ZHAO Xinhua;XIE Xiumin;XU Qiang;ZHOU Qiang;SONG Haizhi(Southwest Institute of Technical Physics, Chengdu 610041, China;Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China)
出处
《激光技术》
CAS
CSCD
北大核心
2020年第5期532-537,共6页
Laser Technology
基金
四川省科技厅应用基础重点资助项目(2018JY0084)。
关键词
光学器件
鲁棒性
有限时域差分法
微腔
单光子源
通信波段
optical devices
robustness
finite-difference time-domain method
microcavity
single photon source
communication band
