安培力微观机制的分析

Analysis on the Micro-mechanism of Ampere Force

以往关于安培力的微观机制研究已经形成了多方观点和假说,包括“合力说”观点、“霍尔电场”观点、“碰撞传递”观点、“正离子受力”观点等等。这些观点仍存在一定的局限性甚至错误,使得安培力的微观机制研究仍处于物理学界讨论的热点之一。现基于以往研究的各种观点,通过梳理和分析以往研究观点的具体内容,对各观点提出相应的各种疑虑。基于上述观点,在导体内的霍尔电场分布和全部晶格电子受力的前提上提出:安培力是导体中晶格上的霍尔电场和通过作用于导体上的载流电子的综合强度的一种宏观表达式。

Previous studies on the micro-mechanism of Ampere force have formed multiple viewpoints and hypotheses,including"joint force","Hall electric field","collisional transfer","positive ion suffering force"and so on.There are still certain limitations and even errors in these viewpoints,making the research on the micro-mechanism of Ampere force still one of the hot topics discussed in physics.By combing and analyzing the specific viewpoints of the previous studies,various doubts about each viewpoint are raised.Based on the above point of view,and on the premise of the Hall electric field distribution and all lattice electrons suffering force,it is proposed that Ampere force is a macro-expression of the combined strength of the Hall electric field on the lattice in the conductor and the current-carrying electrons acting on the conductor.