摘要
Few-layered gallium selenide(GaSe)is obtained by using the mechanical exfoliation method,and its properties are characterized by photoluminescence and Raman spectroscopy.The pressure-dependent phonon scatterings of bulk,few-layered,oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium.All the GaSe samples processed a phase transition around 28 GPa.A new vibration mode at 250 cm^-1 is found in oxidized few-layered GaSe by Raman spectra,which is indexed as the Raman vibration mode of α-Se.
基金
Supported by the National Key Research and Development Program of China(Grant No.2017YFA0403704)
the National Natural Science Foundation of China(Grant Nos.11304113,11474127 and 11574112)
the Fundamental Research Funds for the Central Universities.
