具有梯度波纹结构的硅基可延展柔性PN结

Stretchable silicon PN junction with gradient wavy structure

在利用旋涂掺杂工艺制备基于硅单晶薄膜条带的PN结结构基础上,通过将条带转印至预拉伸柔性基底的方法,使具有PN结结构的硅单晶条带在柔性基底预应变释放后受力屈曲,得到了具有波纹结构的可延展柔性PN结器件。三维轮廓表征结果表明,非规则对称梯形硅单晶薄膜条带在柔性基底被释放后形成了振幅和波长渐变分布的梯度波纹结构。通过对不同退火时间所制备的PN结进行I-V特性表征,观察到PN结正向电流与掺杂时间呈正相关,但过长的掺杂时间会导致PN结单向导通性能下降。最后,在不同宏观拉伸应变下对具有梯度波纹结构的可延展柔性PN结进行了I-V特性表征,测试结果表明梯度波纹结构能够在一定的宏观拉伸应变下保持器件性能稳定,展示了该结构在柔性电子领域的应用潜力。

Here a stretchable PN junction based on the wavy structure was fabricated with the spin-doping technique and transfer-printing method.Using the symmetrically trapezoidal silicon ribbon,gradient distribution of amplitude and wavelength of the wavy structure was obtained by the buckling of the silicon ribbon,which were confirmed by the 3 D optical profiling results.By characterizing the I-V properties of the PN junction prepared with different annealing time,the dependence of the forward current and unidirectional conductivity on the annealing time were observed.The ability of the proposed PN junction to maintain stable performance with the deformation was also demonstrated with the I-V characterizations with different external tensile strain,showing the potential of this proposed device design in stretchable electronics.