ITO/Al复合透明导电薄膜对紫外LED光电性能的提升

Improvement of Optoelectronic Properties of Ultraviolet LEDs with ITO/Al Composite Transparent Conductive Flims

通过在氧化铟锡(ITO)薄膜上蒸镀金属Al,获得ITO/Al复合透明导电薄膜,研究了不同退火条件下不同Al金属层厚度的复合透明导电薄膜的方块电阻和在紫外波段的透过率。结果表明,在ITO薄膜上蒸镀2 nm厚的Al层,经550℃退火后,金属Al在ITO薄膜上形成粒径约为10 nm的颗粒,增加了薄膜表面的粗糙度,得到的复合透明导电薄膜的方块电阻和在紫外波段透过率的综合性能最佳,在360~410 nm波长的平均透过率大于95%,且方块电阻为22.8Ω/□。采用ITO/Al(100 nm/2 nm)复合透明导电薄膜制备了390 nm紫外发光二极管(LED)芯片(尺寸为325μm×275μm),与用ITO薄膜制备的LED芯片相比,其光电转换效率提升了约3%,饱和电流提升了15.00%,饱和光功率提升了15.04%。研究结果表明,采用ITO/Al复合透明导电薄膜可有效提升紫外LED的光电性能。

Indium tin oxide/aluminium(ITO/Al)composite transparent conductive films were obtained by evaporating Al metal on ITO films.The sheet resistance and ultraviolet band transmittance of the composite transparent conductive films with different Al metal thickness under different annealing conditions were studied.It is proved that the method of evaporating of 2 nm Al layer on ITO films and annealing at 550℃can produce Al particles of about 10 nm on the ITO films,and the obtained composite transparent conductive films have the best comprehensive properties of sheet resistance and ultraviolet band transmittance.The average transmittance at the wavelength of 360-410 nm is greater than 95%,and the sheet resistance is 22.8Ω/□.Compared with the LED chip prepared with ITO film,the 390 nm ultraviolet light emitting diode(LED)normal chips(325μm×275μm)were prepared with the ITO/Al(100 nm/2 nm)composite transparent conductive films,the photoelectric conversion efficiency of the LED increases by about 3%,and the saturation current increases by 15.00%,and the saturation optical power increases by 15.04%.The research results show that the photoelectric properties of ultraviolet LEDs can be effectively improved by using ITO/Al composite transparent conductive films.