摘要
设计了一种具有分组缓变间距场限环(MGM-FLR)结终端结构的SiC功率MOSFET,并基于国内现有的SiC电力电子器件工艺平台进行了流片,完成了1700 V/10 A SiC功率MOSFET样品的制备。测试结果表明,MGM-FLR结构有效调制并优化了结终端区域的表面电场强度分布,SiC MOSFET漏电流为1μA时最大击穿电压达到2400 V,为理想平行平面结击穿电压的91%。器件的比导通电阻约为36 mΩ·cm^2,阈值电压为2.9 V。对制备的SiC功率MOSFET进行了150℃、168 h的高温反偏(HTRB)可靠性测试评估,实验前后的击穿电压变化量不超过100 V,初步验证了MGM-FLR结终端结构的鲁棒性和可行性。
A 1700 V/10 A SiC power MOSFET with multiple-zone gradient modulation field limiting ring(MGM-FLR)junction terminal structure was designed and fabricated based on the present domestic SiC power electronics device process platform.The test results show that the structure of MGM-FLR effectively modulates and optimizes the distribution of the surface electric field strength in the junction terminal region,the maximum breakdown voltage of SiC MOSFET reaches 2400 V at the leakage current of 1μA,which is 91%of the breakdown voltage of the ideal parallel plane junction.The specific on-resistance of the device is about 36 mΩ·cm^2,and the threshold voltage is 2.9 V.The reliability test of high temperature reverse bias(HTRB)was carried out for the fabricated SiC power MOSFETs at 150℃for 168 h,the variation of breakdown voltage is less than 100 V before and after the test,which preliminarily verified the robustness and feasibility of the junction terminal structure of MGM-FLR.
作者
刘岳巍
杨瑞霞
张志国
王永维
邓小川
Liu Yuewei;Yang Ruixia;Zhang Zhiguo;Wang Yongwei;Deng Xiaochuan(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;School of Electrical and Electronic Engineering,Shijiazhuang Tiedao University,Shijiazhuang 050043,China;Beijing Advanced Semiconductor Innovation Co.,Ltd.,Beijing 100300,China;The 13th Research Institution,CETC,Shijiazhuang 050051,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《半导体技术》
CAS
北大核心
2020年第9期685-689,695,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(61774054)。
