少层二硫化钼薄膜的制备及其光谱特性

Preparation and Spectral Characteristics of Few-Layer Molybdenum Disulfide Thin Films

二硫化钼(MoS2)具有与石墨烯类似的层状结构和优异的电学、光学特性,在光电器件和能量存储等领域具有广阔的应用前景。以MoS2靶材和硫粉作为原料,采用磁控溅射结合硫化法制备出少层MoS2薄膜。采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、紫外-可见分光光度计(UV-Vis)、拉曼光谱和X射线光电子能谱(XPS)等对样品的形貌、结构与光谱特性进行了表征。结果表明,制备的MoS2薄膜具有4层结构特征,表面均匀;硫化可提高MoS2薄膜的纯度,获得高品质薄膜,改善其性能,硫化后的MoS2薄膜为2H-MoS2晶体结构。

Due to its similar layered structure as graphene,excellent electrical and optical properties,molybdenum disulfide(MoS2)has a broad application prospect in the fields of photoelectric devices and energy storage.Using MoS2 target material and sulfur powder as raw materials,few-layer MoS2 thin films were prepared by using magnetron sputtering combined with sulfurization.The morphologies,structures and spectral characteristic of the samples were characterized by X-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),ultraviolet-visible spectrophotometer(UV-Vis),Raman spectrum and X-ray photoelectron spectroscopy(XPS).The results show that the prepared MoS2 thin films have the characteristics of four-layered structure and uniform surfaces.Sulfuration can improve the purity of MoS2 thin film,obtain high quality film and improve its performance.The sulfuration MoS2 thin films have a 2 H-MoS2 crystal structure.