基于NV色心的晶体管放大器近场分布成像

Near Field Distribution Imaging of Transistor Amplifier Based on NV Color Center

微波毫米波芯片非破坏高分辨率近场分布成像对高频射频芯片的功能和失效分析至关重要.本实验基于金刚石NV(Nitrogen-Vacancy)色心这一独特的量子体系,选取直径约为14μm的金刚石样品,将其粘附于20μm直径的光纤锥形尖端,制备成高分辨、非破坏、微型化的探针,通过分析NV色心在微波场变化中的基态自旋演化规律,采用全光学的方法,一次性成像,获得芯片表面整体场分布.本文给出了氮化镓高电子迁移率晶体管的近场分布成像图,拟合出光学探测磁共振(Optically Detected Magnetic Resonance,ODMR)谱图以及Rabi谱图,并对成像结果进行了分析.这一系统具有高效、高分辨、高灵敏度、对近场干扰小等优势,有望为高集成度微波电路故障诊断、天线辐射剖面、微波集成电路电磁兼容测试等应用提供一种全新的方案.

The nondestructive and high-resolution near-field distribution imaging of microwave and millimeter wave chips is very important for the function and failure analysis of RF chips.This experiment is based on the unique quantum system of diamond NV(nitrogen-vacancy)color center.A diamond sample with a diameter of about 14μm is selected and adhered to the tapered tip of a 20μm fiber.A high-resolution,non-destructive and miniaturized probe is prepared by analyzing the ground state spin evolution law of NV color center in the change of microwave field,and the all optical method is used.The whole field distribution on the chip surface is obtained by imaging.In this paper,the near-field distribution image of GaN high electron mobility transistor is given.The ODMR spectrum and Rabi spectrum are fitted,and the imaging results are analyzed.This system has the advantages of high efficiency,high resolution,high sensitivity and low near-field interference.It is expected to provide a new scheme for the application of high integration microwave circuit fault diagnosis,antenna radiation profile,microwave integrated circuit electromagnetic compatibility test,etc.