磁控溅射本底真空度对制备高锰硅的形貌影响

Effect of background vacuum on the morphology of higher manganese silicide prepared by magnetron sputtering

基于当前不同研究者在研究高锰硅过程中选用的本底真空度区间跨度过大的现状,本文以本底真空度为变量,在Si衬底上沉积锰膜,对不同本底真空度下获得的Mn/Si膜同时进行Ar气氛退火处理,退火前后的样品均用SEM对其形貌进行表征,并对结果进行分析,以确定合适的本底真空度参数。结果表明:在10^-3 Pa本底真空度下,退火前薄膜表面的锰粒子会出现明显团聚现象,当本底真空度提高到10^-4 Pa量级时,团聚现象得到显著改善。在4×10^-3~8×10^-4 Pa本底真空度下,锰粒子的分布均匀程度较差。而本底真空度达到7×10^-5 Pa时,薄膜表面会出现碎裂的情况。在溅射用于制备高锰硅的锰膜时,建议本底真空度在5.7×10^-4~7×10^-5 Pa范围内。

Based on the too wide range of background vacuum degree selected by different researchers in the study of higher manganese silicide,in order to determine the suitable magnetron sputtering background vacuum conditions for preparing higher manganese silicide thin films,in this work,manganese film was deposited on Si substrate with background vacuum degree as a variable.The Mn/Si film obtained under different background vacuum degree in Ar atmosphere was annealed and the samples before and after annealing were characterized by SEM.The results showed that under the background vacuum of 10^-3 Pa,the manganese particles on the surface of the film would obviously agglomerate before annealing.When the background vacuum increased to the level of 10^-4 Pa,the agglomerate phenomenon would be significantly alleviated.Under the background vacuum of 4×10^-3~8×10^-4 Pa,the distribution uniformity of manganese particles was poor.When the background vacuum reached 7×10^-5 Pa,the film surface would break.It was suggested that the background vacuum should be in the range of 5.7×10^-4~7×10^-5 Pa when sputtering higher manganese silicide films.